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In the free-electron model, increasing the conduction electron concentration of a metal raises its Fermi energy.

A designer needs a semiconductor for an infrared photodetector operating at 1300 nm. Using hc = 1240 eV·nm, the property to specify first is:

The penetration depth of light in a semiconductor is:

The oviduct is the location for:

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In crystalline silicon, the valence band and the conduction band originate respectively from:

A 6 mA source injects current into a node. The node is connected to ground through 2 kΩ and 1 kΩ resistors. What is the node voltage?

At 300 K the Fermi–Dirac distribution departs appreciably from its 0 K step shape only within a window a few kT wide around the Fermi energy.

In the high-temperature Dulong–Petit limit the molar heat capacity of a solid approaches 3R, with R = 8.314 J mol⁻¹K⁻¹. The energy required to raise the temperature of 2.0 mol of such a solid by 50 K is closest to:

A BJT has a common-emitter current gain β = 40 and operates with a base current I_B = 100 μA. Neglecting leakage, the emitter current I_E is closest to: