THIS CONTENT IS PROTECTED AND MAY NOT BE SHARED, UPLOADED, SOLD, OR DISTRIBUTED High Electrоn Mоbility Trаnsistоrs (HEMT) rely on the use of а bаrrier semiconductor to prevent leakage current between an electrode and the “channel” which is the semiconductor where electron transport occurs. This leakage current is due to tunneling, which is a fundamental property of subatomic particles and cannot be neglected. Here, estimate the tunneling probability of an electron with an effective mass of [m1] m0, where m0 is the mass of an electron, and kinetic energy of [e1] eV in the presence of a rectangular potential barrier of height V0 = [v1] eV and width [a] Å.